Detail Cantuman
Pencarian SpesifikE Book
Silicon Quantum Integrated Circuits
Material Science -- Resumé of Semiconductor Physics -- Realisation of Potential Barriers -- Electronic Device Principles -- Heterostructure Bipolar Transistors - HBTs -- Hetero Field Effect Transistors (HFETs) -- Tunneling Phenomena -- Optoelectronics -- Integration -- Outlook.Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Ketersediaan
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Informasi Detil
Judul Seri |
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No. Panggil |
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Penerbit | Springer : Berlin., 2005 |
Deskripsi Fisik |
XII, 364 p.online resource.
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Bahasa |
English
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ISBN/ISSN |
9783540263821
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Klasifikasi |
620.11295
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Tipe Isi |
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Tipe Media |
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Tipe Pembawa |
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Edisi |
1st ed.
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Subyek |
Optical materials.
Electronic materials. Lasers. Photonics. Electronic circuits. Condensed matter. Nanotechnology. Electronics. Microelectronics. Optical and Electronic Materials. Optics, Lasers, Photonics, Optical Devices. Circuits and Systems. Condensed Matter Physics. Nanotechnology. Electronics and Microelectronics, Instrumentation. |
Info Detil Spesifik |
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Pernyataan Tanggungjawab |
E. Kasper, D.J. Paul.
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Informasi Lainnya
Anak judul |
Silicon-Germanium Heterostructure Devices: Basics and Realisations
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Judul asli |
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DOI/URL |
https://doi.org/10.1007/b137494
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Versi lain/terkait
Tidak tersedia versi lain