Technology and Economics -- High Temperature Electronics - Cluster Effects -- On the Evolution of SOI Materials and Devices -- SOI Technology as a Basis for Microphotonic-Microelectronic Integrated Devices -- SOI Material Technologies -- Smart Cut Technology: The Path for Advanced SOI Substrates -- Porous Silicon Based SOI: History and Prospects -- Achievement of SiGe-on-Insulator Technology -- CVD Diamond Films for SOI Technologies -- Radical Beam Quasiepitaxy Technology for Fabrication of Wide-Gap Semiconductors on Insulator -- Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of Simox - Like Structures -- SiO2 and Si3N4 Phase Formation by Ion Implantation with In-Situ Ultrasound Treatment -- Fabrication and Characterisation of Silicon on Insulator Substrates Incorporating Thermal Vias -- Reliability and Operation of SOI Devices in Harsh Environment -- Reliability and Electrical Fluctuations in Advanced SOI CMOS Devices -- Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs -- Recent Advances in SOI MOSFET Devices and Circuits for Ultra-Low Power / High Temperature Applications -- Silicon-on-Insulator Circuits for Application at High Temperatures -- High-Voltage SOI Devices for Automotive Applications -- Heat Generation Analysis in SOI LDMOS Power Transistors -- Novel SOI MOSFET Structure for Operation over a Wide Range of Temperatures -- MOSFETs Scaling Down: Advantages and Disadvantages for High Temperature Applications -- Temperature Dependence of RF Losses in High-Resistivity SOI Substrates -- Radiation Effects -- Review of Radiation Effects in Single and Multiple-Gate SOI MOSFETs -- Radiation Effects in SOI: Irradiation by High Energy Ions and Electrons -- Radiation Characteristics of Short P- Channel MOSFETs on SOI Substrates -- Total Dose Behavior of Partially Depleted Delecut SOI MOSFETs -- Radiation Effect on Electrical Properties of Fully-Depleted Unibond SOI MOSFETs -- Characterization and Simulation of SOI Devices Operating under Harsh Environment -- Low Cost High Temperature Test System for SOI Devices -- Characterization of Carrier Generation in Thin-Film SOI Devices by Reverse Gated-Diode Technique and its Application at High Temperatures -- Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs -- Novel SOI Devices and Sensors Operating at Harsh Conditions -- SiGe Heterojunction Bipolar Transistors on Insulating Substrates -- Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI) -- High-Voltage High-Current DMOS Transistor Compatible with High-Temperature Thin-Film SOI CMOS Applications -- A Novel Low Leakage EEPROM Cell for Application in an Extended Temperature Range (?40°C Up to 225°C) -- Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation -- Polysilicon-on-Insulator Layers at Cryogenic Temperatures and High Magnetic Fields -- Planar Photomagnetic Effect SOI Sensors for Various Applications with Low Detection Limit -- Theoretical Limit for the SiO2 Thickness in Silicon MOS Devices -- Compact Model of the Nanoscale Gate-All-Around MOSFET -- Self-Assembled Semiconductor Nanowires on Silicon and Insulating Substrates: Experimental Behavior -- Fabrication of SOI Nano Devices.This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.